2N3903 discrete power & signal technologies npn general purpose amplifier 2N3903 this device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 ma. sourced from process 23. see 2n3904 for characteristics. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage 40 v v cbo collector-bas e voltage 60 v v ebo emitter-base voltage 6.0 v i c collector current - continuous 200 ma t j , t stg operating and storage j unction temperature range -55 to +150 c symbol characteristic max units 2N3903 p d total device dissipation derate above 25 c 625 5.0 mw mw/ c r q jc thermal resistanc e, j unction to case 83.3 c/w r q ja thermal resistanc e, j unction to ambient 200 c/w c b e to-92 ? 1997 fairchild semiconductor corporation
2N3903 npn general purpose amplifier (continued) electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min max units v (br)ceo collector-emitter breakdown voltage* i c = 1.0 ma, i b = 0 40 v v (br)cbo collector-base breakdown voltage i c = 10 m a, i e = 0 60 v v (br) ebo emitter-base breakdown voltage i e = 10 m a, i c = 0 6.0 v i cex collector cutoff current v ce = 30 v, v ob = 3.0 v 50 na i bl base cutoff current v ce = 30 v, v ob = 3.0 v 50 na on characteristics* h fe dc current gain v ce = 1.0 v, i c = 0.1 ma v ce = 1.0 v, i c = 1.0 ma v ce = 1.0 v, i c = 10 ma v ce = 1.0 v, i c = 50 ma v ce = 1.0 v, i c = 100 ma 20 35 50 30 15 150 v ce( sat ) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 0.2 0.3 v v v be( sat ) base-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 0.65 0.85 0.95 v v small signal characteristics c ob output capacitance v cb = 5.0 v, f = 100 khz 4.0 pf c ib input capacitance v eb = 0.5 v, f = 100 khz 8.0 pf h fe small-signal current gain i c = 10 ma, v ce = 20 v, f = 100 mhz 2.5 h fe small-signal current gain v ce = 10 v, i c = 1.0 ma 50 200 h ie input impedance f = 1.0 khz 1.0 8.0 k w h re voltage feedback ratio 0.1 5.0 x 10 -4 h oe output admittance 1.0 40 m mhos nf noise figure v ce = 5.0 v, i c = 100 m a, r s = 1.0 k w , b w = 10 hz to 15.7 khz 6.0 db switching characteristics * pulse test: pulse width 300 m s, duty cycle 2.0% t d delay time v cc = 3.0 v, i c = 10 ma, 35 ns t r rise time i b1 = 1.0 ma , v ob ( off ) = 0.5 v 35 ns t s storage time v cc = 3.0 v, i c = 10 ma 175 ns t f fall time i b1 = i b2 = 1.0 ma 50 ns z
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